UCC27211DDAR Texas Instruments
Виробник: Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR
Packaging: Bulk
Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: 8-SO PowerPad
Rise / Fall Time (Typ): 7.2ns, 5.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.3V, 2.8V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
| Кількість | Ціна |
|---|---|
| 171+ | 116.09 грн |
Відгуки про товар
Написати відгук
Технічний опис UCC27211DDAR Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 140°C (TJ), Voltage - Supply: 8V ~ 17V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 120 V, Supplier Device Package: 8-SO PowerPad, Rise / Fall Time (Typ): 7.2ns, 5.5ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 1.3V, 2.8V, Current - Peak Output (Source, Sink): 4A, 4A, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції UCC27211DDAR за ціною від 70.77 грн до 162.44 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
UCC27211DDAR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR Packaging: Cut Tape (CT) Package / Case: 8-PowerSOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: 8-SO PowerPad Rise / Fall Time (Typ): 7.2ns, 5.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.3V, 2.8V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 717 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UCC27211DDAR | Виробник : Texas Instruments |
Gate Drivers 4A Peak Hi Freq High /Low-Side Driver A A 595-UCC27211DDA |
на замовлення 2668 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
UCC27211DDAR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R |
на замовлення 1208 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
UCC27211DDAR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R |
товару немає в наявності |
|||||||||||||||||
|
|
UCC27211DDAR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R |
товару немає в наявності |
|||||||||||||||||
|
|
UCC27211DDAR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR Packaging: Tape & Reel (TR) Package / Case: 8-PowerSOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: 8-SO PowerPad Rise / Fall Time (Typ): 7.2ns, 5.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.3V, 2.8V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
|||||||||||||||||
| UCC27211DDAR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,MOSFET half-bridge; SO8-EP; 4A; 50÷290mV Type of integrated circuit: driver Topology: H-bridge; MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8-EP Output current: 4A Output voltage: 50...290mV Number of channels: 2 Supply voltage: 8...17V DC Integrated circuit features: active Miller clamp; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 600ns Pulse fall time: 400ns Kind of package: reel; tape |
товару немає в наявності |