UES1002SM-1/TR Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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Технічний опис UES1002SM-1/TR Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: A, SQ-MELF, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.
Інші пропозиції UES1002SM-1/TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| UES1002SM-1/TR | Виробник : Microchip Technology |
 Rectifiers UFR,FRR |
товару немає в наявності |