UF3C065030B3

Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V

Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V

Виробник: ONSEMI
Description: ONSEMI - UF3C065030B3 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 65 A, 650 V, 0.027 ohm, D2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 65A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 242W
Bauform - Transistor: D2PAK
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.027ohm
SVHC: No SVHC (17-Jan-2023)

Виробник: onsemi
SiC MOSFETs 650V/30MOSICFETG3TO263-3

Виробник: ONSEMI
Description: ONSEMI - UF3C065030B3 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 65 A, 650 V, 0.027 ohm, D2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 65A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 242W
Bauform - Transistor: D2PAK
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.027ohm
SVHC: No SVHC (17-Jan-2023)