UG06D

Виробник:

на замовлення 830 шт:

термін постачання 14-28 дні (днів)

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Технічний опис UG06D

Description: DIODE GEN PURP 200V 600MA TS-1, Packaging: Tape & Reel (TR), Package / Case: T-18, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 15 ns, Technology: Standard, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Current - Average Rectified (Io): 600mA, Supplier Device Package: TS-1, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.

Інші пропозиції UG06D

Назва	Виробник	Інформація	Доступність
UG06D	Виробник : Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 200V 600MA TS-1 Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V	товар відсутній
UG06D	Виробник : Taiwan Semiconductor Corporation	Description: DIODE GEN PURP 200V 600MA TS-1 Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V	товар відсутній
UG06D	Виробник : Taiwan Semiconductor	Rectifiers 0,6A,200V,Std GLASS Pass ULTRAFAST Rect	товар відсутній