UG06D Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| Кількість | Ціна |
|---|---|
| 16+ | 19.78 грн |
| 24+ | 12.88 грн |
| 100+ | 8.69 грн |
| 500+ | 6.28 грн |
| 1000+ | 5.65 грн |
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Технічний опис UG06D Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 600MA TS-1, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TS-1, Current - Average Rectified (Io): 600mA, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 15 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: T-18, Axial, Packaging: Tape & Reel (TR).