Технічний опис UGB8DTHE3_A/P Vishay
Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tube, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції UGB8DTHE3_A/P
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UGB8DTHE3_A/P | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 8A TO263ABPackaging: Tube Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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UGB8DTHE3_A/P | Виробник : Vishay General Semiconductor |
Rectifiers 200V 150A AEC-Q101 |
товар відсутній |