| Кількість | Ціна |
|---|---|
| 1+ | 1216.15 грн |
| 25+ | 1041.23 грн |
| 100+ | 781.64 грн |
| 250+ | 719.75 грн |
| 600+ | 697.49 грн |
| 3000+ | 696.80 грн |
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Технічний опис UJ3C120070K4S Qorvo
Description: 1200V/70MOHM, N-OFF SIC CASCODE,, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 6V @ 10mA, Power Dissipation (Max): 254.2W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V, Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції UJ3C120070K4S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| UJ3C120070K4S | Виробник : onsemi |
 Description: 1200V/70MOHM, N-OFF SIC CASCODE,Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 254.2W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
товару немає в наявності |