UJ3C120150K3S onsemi

Description: SICFET N-CH 1200V 18.4A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5.5V @ 10mA, Power Dissipation (Max): 166.7W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V, Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc), FET Type: N-Channel, Technology: SiCFET (Cascode SiCJFET), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.