| Кількість | Ціна |
|---|---|
| 1+ | 778.00 грн |
| 25+ | 665.70 грн |
| 100+ | 499.97 грн |
| 250+ | 460.16 грн |
| 500+ | 428.04 грн |
| 1000+ | 413.38 грн |
| 6000+ | 412.68 грн |
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Технічний опис UJ4C075044L8S Qorvo
Description: 750V/44MO,SICFET,G4,TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V.
Інші пропозиції UJ4C075044L8S за ціною від 510.62 грн до 868.04 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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UJ4C075044L8S | onsemi |
 Description: 750V/44MO,SICFET,G4,TOLLPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
на замовлення 1961 шт: термін постачання 21-31 дні (днів) |
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| UJ4C075044L8S |
|
Виробник: onsemi
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 868.04 грн |
| 10+ | 583.92 грн |
| 100+ | 510.62 грн |