UJ4SC075010L8S Qorvo
Виробник: QorvoDescription: 750V/10MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
FET Feature: Depletion Mode
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
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Технічний опис UJ4SC075010L8S Qorvo
Description: 750V/10MO,SICFET,G4,TOLL, Packaging: Bulk, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 106A (Tc), Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V, FET Feature: Depletion Mode, Power Dissipation (Max): 556W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 10mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V.