UM6K33NTN Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.14 грн |
| 6000+ | 5.35 грн |
| 9000+ | 5.06 грн |
| 15000+ | 4.45 грн |
| 21000+ | 4.27 грн |
| 30000+ | 4.10 грн |
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Технічний опис UM6K33NTN Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 120mW, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V, Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UMT6, Part Status: Active.
Інші пропозиції UM6K33NTN за ціною від 3.80 грн до 28.74 грн
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UM6K33NTN | ROHM Semiconductor |
MOSFETs 1.2V Drive Nch+Nch MOSFET |
на замовлення 146843 шт: термін постачання 21-30 дні (днів) |
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UM6K33NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±8V On-state resistance: 7.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2647 шт: термін постачання 14-30 дні (днів) |
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UM6K33NTN | Rohm Semiconductor |
Description: MOSFET 2N-CH 50V 0.2A UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 120mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UMT6 Part Status: Active |
на замовлення 563625 шт: термін постачання 21-31 дні (днів) |
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на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| UM6K33NTN |
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Виробник: ROHM Semiconductor
MOSFETs 1.2V Drive Nch+Nch MOSFET
MOSFETs 1.2V Drive Nch+Nch MOSFET
на замовлення 146843 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.49 грн |
| 28+ | 11.75 грн |
| 100+ | 5.25 грн |
| 1000+ | 4.14 грн |
| 3000+ | 3.80 грн |
| UM6K33NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±8V
On-state resistance: 7.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.74 грн |
| 23+ | 18.28 грн |
| 50+ | 12.22 грн |
| 100+ | 10.22 грн |
| 500+ | 7.15 грн |
| 1000+ | 6.32 грн |
| 1500+ | 6.07 грн |
| UM6K33NTN |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
Description: MOSFET 2N-CH 50V 0.2A UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UMT6
Part Status: Active
на замовлення 563625 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.74 грн |
| 18+ | 16.83 грн |
| 100+ | 10.61 грн |
| 500+ | 7.42 грн |
| 1000+ | 6.60 грн |



