UMB4NFHATN ROHM Semiconductor
на замовлення 5849 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 27.81 грн |
| 19+ | 18.93 грн |
| 100+ | 6.75 грн |
| 1000+ | 5.05 грн |
| 3000+ | 4.35 грн |
| 9000+ | 3.49 грн |
| 24000+ | 3.26 грн |
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Технічний опис UMB4NFHATN ROHM Semiconductor
Description: TRANS PREBIAS 2PNP 50V UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: UMT6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції UMB4NFHATN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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UMB4NFHATN | Виробник : Rohm Semiconductor |
 Description: TRANS PREBIAS 2PNP 50V UMT6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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UMB4NFHATN | Виробник : Rohm Semiconductor |
Description: TRANS PREBIAS 2PNP 50V UMT6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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UMB4NFHATN | Виробник : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ |
товару немає в наявності |