UMD6NFHATR ROHM Semiconductor
Виробник: ROHM SemiconductorBipolar Transistors - BJT NPN+PNP, SOT-363, Dual Digital Transistor (Bias Resistor Built-in Transistor)
на замовлення 1284 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 35.87 грн |
| 17+ | 21.16 грн |
| 100+ | 12.50 грн |
| 500+ | 9.63 грн |
| 1000+ | 8.54 грн |
| 3000+ | 4.97 грн |
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Технічний опис UMD6NFHATR ROHM Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: UMT6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції UMD6NFHATR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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UMD6NFHATR | Виробник : Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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UMD6NFHATR | Виробник : Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |