UMH2NFHATN Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 780 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.14 грн |
| 14+ | 23.09 грн |
| 100+ | 11.64 грн |
| 500+ | 9.68 грн |
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Технічний опис UMH2NFHATN Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: UMT6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції UMH2NFHATN за ціною від 5.65 грн до 37.42 грн
| Фото | Назва | Виробник | Інформація |
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UMH2NFHATN | Виробник : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
на замовлення 2574 шт: термін постачання 21-30 дні (днів) |
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UMH2NFHATN | Виробник : Rohm Semiconductor |
Description: NPN+NPN DIGITAL TRANSISTOR (CORR Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |