UMWIRF7476TR
Виробник: UMW
Description: MOSFET N-CH 12V 15A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна |
|---|---|
| 5+ | 64.30 грн |
| 10+ | 38.73 грн |
| 100+ | 25.22 грн |
| 500+ | 18.20 грн |
| 1000+ | 16.44 грн |
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Технічний опис UMWIRF7476TR UMW
Description: MOSFET N-CH 12V 15A 8SOIC, Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.9V @ 250µA, Power Dissipation (Max): 2.5W (Ta).
Інші пропозиції UMWIRF7476TR
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UMWIRF7476TR | Виробник : UMW |
Description: MOSFET N-CH 12V 15A 8SOIC Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 2.5W (Ta) |
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