Технічний опис UNR222200L
Description: TRANS PREBIAS NPN 50V 0.5A MINI3, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: Mini3-G1, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції UNR222200L
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
UNR222200L | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 50V 0.5A MINI3Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: Mini3-G1 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
UNR222200L | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 50V 0.5A MINI3Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: Mini3-G1 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| UNR222200L |
![]() |
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 50V 0.5A MINI3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: Mini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.5A MINI3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: Mini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| UNR222200L |
![]() |
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 50V 0.5A MINI3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: Mini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.5A MINI3
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: Mini3-G1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.



