UNR412100A Panasonic Electronic Components
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SSIP
Packaging: Tape & Box (TB)
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: NS-A1
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
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Технічний опис UNR412100A Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Through Hole, Package / Case: 3-SSIP, Packaging: Tape & Box (TB), Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 200 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Obsolete, Supplier Device Package: NS-A1, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V.
Інші пропозиції UNR412100A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
UNR412100A | Panasonic Electronic Components |
Description: TRANS PREBIAS PNP 300MW NS-B1Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 200 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: NS-A1 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Transistor Type: PNP - Pre-Biased Mounting Type: Through Hole Package / Case: 3-SSIP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| UNR412100A |
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Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: NS-A1
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SSIP
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 300MW NS-B1
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: NS-A1
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SSIP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.


