UNR42100RA Panasonic Electronic Components
Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SIP
Packaging: Tape & Box (TB)
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Технічний опис UNR42100RA Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 150 MHz, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: NS-B1, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: 3-SIP, Packaging: Tape & Box (TB).
Інші пропозиції UNR42100RA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
UNR42100RA | Panasonic Electronic Components |
Description: TRANS PREBIAS NPN 300MW NS-B1Resistor - Base (R1): 47 kOhms Frequency - Transition: 150 MHz Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: NS-B1 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Through Hole Package / Case: 3-SIP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| UNR42100RA |
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Виробник: Panasonic Electronic Components
Description: TRANS PREBIAS NPN 300MW NS-B1
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SIP
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 300MW NS-B1
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 150 MHz
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SIP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.


