UPA2451BTL-E1-A Renesas Electronics Corporation

Description: MOSFET 2N-CH 30V 8.2A 6HWSON, Packaging: Bulk, Package / Case: 6-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.2A, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 6-HWSON.