UPA2630T1R-E2-AX Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 12V 7A 6HUSON
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-HUSON (2x2)
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 1.8V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис UPA2630T1R-E2-AX Renesas Electronics Corporation
Description: MOSFET P-CH 12V 7A 6HUSON, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-HUSON (2x2), Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 1.8V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції UPA2630T1R-E2-AX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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UPA2630T1R-E2-AX | Виробник : Renesas Electronics |
MOSFET MOSFET |
товару немає в наявності |