UPA2690T1R-E2-AX Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: MOSFET N/P-CH 20V 4A/3A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: 6-HUSON (2x2)
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Технічний опис UPA2690T1R-E2-AX Renesas Electronics Corporation
Description: MOSFET N/P-CH 20V 4A/3A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-WFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V, Rds On (Max) @ Id, Vgs: 42mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, FET Feature: Logic Level Gate, 2.5V Drive, Supplier Device Package: 6-HUSON (2x2).
Інші пропозиції UPA2690T1R-E2-AX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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UPA2690T1R-E2-AX | Виробник : Renesas Electronics |
MOSFET MOSFET |
товару немає в наявності |