UPA2739T1A-E2-AY Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 85A 8HVSON
Input Capacitance (Ciss) (Max) @ Vds: 6050 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HVSON (5x5.4)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 23A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 85A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Технічний опис UPA2739T1A-E2-AY Renesas Electronics Corporation
Description: MOSFET P-CH 30V 85A 8HVSON, Input Capacitance (Ciss) (Max) @ Vds: 6050 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HVSON (5x5.4), Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 23A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 85A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції UPA2739T1A-E2-AY
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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UPA2739T1A-E2-AY | Виробник : Renesas Electronics |
 MOSFET MOSFET |
товару немає в наявності |