UPA2822T1L-E1-AT Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 34A 8HWSON
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HWSON (3.3x3.3)
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Технічний опис UPA2822T1L-E1-AT Renesas Electronics Corporation
Description: MOSFET N-CH 30V 34A 8HWSON, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HWSON (3.3x3.3), Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 34A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції UPA2822T1L-E1-AT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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UPA2822T1L-E1-AT | Виробник : Renesas Electronics |
MOSFET MOSFET |
товару немає в наявності |