UPA2826T1S-E2-AT Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: 8P HWSON
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Part Status: Active
Supplier Device Package: 8-HWSON (3.3x3.3)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 20W (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 48.74 грн |
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Технічний опис UPA2826T1S-E2-AT Renesas Electronics Corporation
Description: 8P HWSON, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Part Status: Active, Supplier Device Package: 8-HWSON (3.3x3.3), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 20W (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції UPA2826T1S-E2-AT за ціною від 46.47 грн до 176.39 грн
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UPA2826T1S-E2-AT | Виробник : Renesas Electronics Corporation |
Description: 8P HWSON Power Dissipation (Max): 20W (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Part Status: Active Supplier Device Package: 8-HWSON (3.3x3.3) Vgs(th) (Max) @ Id: 1.5V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V Drain to Source Voltage (Vdss): 20 V |
на замовлення 7189 шт: термін постачання 21-31 дні (днів) |
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UPA2826T1S-E2-AT | Виробник : Renesas Electronics |
MOSFETs POWER TRANSISTOR MOS-IC |
на замовлення 448 шт: термін постачання 21-30 дні (днів) |
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