UPTB10e3/TR13 Microchip Technology
Виробник: Microchip TechnologyDescription: TVS DIODE 10VWM 18VC POWERMITE 1
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.33A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
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Технічний опис UPTB10e3/TR13 Microchip Technology
Description: TVS DIODE 10VWM 18VC POWERMITE 1, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 8.33A, Voltage - Reverse Standoff (Typ): 10V, Supplier Device Package: Powermite 1 (DO216-AA), Bidirectional Channels: 1, Voltage - Breakdown (Min): 11V, Voltage - Clamping (Max) @ Ipp: 18V, Power - Peak Pulse: 1000W (1kW), Power Line Protection: No.
Інші пропозиції UPTB10e3/TR13
| Фото | Назва | Виробник | Інформація |
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Ціна |
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UPTB10e3/TR13 | Виробник : Microchip Technology |
Description: TVS DIODE 10VWM 18VC POWERMITE 1 Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.33A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: Powermite 1 (DO216-AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
товару немає в наявності |
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| UPTB10e3/TR13 | Виробник : Microsemi |
ESD Suppressors / TVS Diodes Transient Voltage Suppressor |
товару немає в наявності |