
UPTB8e3/TR7 Microchip Technology

Description: TVS DIODE 8VWM 13.7VC POWERMITE1
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: Powermite 1 (DO216-AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 13.7V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
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Технічний опис UPTB8e3/TR7 Microchip Technology
Description: TVS DIODE 8VWM 13.7VC POWERMITE1, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 10.9A, Voltage - Reverse Standoff (Typ): 8V, Supplier Device Package: Powermite 1 (DO216-AA), Bidirectional Channels: 1, Voltage - Breakdown (Min): 9V, Voltage - Clamping (Max) @ Ipp: 13.7V, Power - Peak Pulse: 150W, Power Line Protection: No, Part Status: Active.
Інші пропозиції UPTB8e3/TR7
Фото | Назва | Виробник | Інформація |
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UPTB8e3/TR7 | Виробник : Microsemi |
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