Технічний опис US1DHE3_A/I Vishay
Description: DIODE GEN PURP 200V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції US1DHE3_A/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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US1DHE3_A/I | Виробник : Vishay |
 Diode Switching 200V 1A 2-Pin SMA T/R Automotive AEC-Q101 |
товару немає в наявності |
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US1DHE3_A/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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US1DHE3_A/I | Виробник : Vishay General Semiconductor |
Rectifiers 200 Volt 1.0A 50ns 30 Amp IFSM |
товару немає в наявності |