US1JHE3_A/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 6074 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
11+ | 29.71 грн |
14+ | 22.29 грн |
100+ | 13.35 грн |
500+ | 11.6 грн |
1000+ | 7.89 грн |
2000+ | 7.26 грн |
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Технічний опис US1JHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.
Інші пропозиції US1JHE3_A/I за ціною від 6.87 грн до 32.97 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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US1JHE3_A/I | Виробник : Vishay General Semiconductor | Rectifiers 600 Volt 1.0A 75ns 30 Amp IFSM |
на замовлення 14386 шт: термін постачання 21-30 дні (днів) |
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US1JH-E3-A/I | Виробник : Vishay | Diode Switching 600V 1A 2-Pin SMA T/R Automotive AEC-Q101 |
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US1JHE3_A/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товар відсутній |