US1ME-TP Micro Commercial Components (MCC)
на замовлення 3542 шт:
термін постачання 21-30 дні (днів)
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Технічний опис US1ME-TP Micro Commercial Components (MCC)
Description: DIODE GEN PURP 1KV 1A SMAE, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 17pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMAE, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1, Voltage Coupled to Current - Reverse Leakage @ Vr: 1000.
Інші пропозиції US1ME-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| US1ME-TP | Виробник : Microsemi |
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на замовлення 126000 шт: термін постачання 14-28 дні (днів) |
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US1ME-TP | Виробник : Micro Commercial Components |
Rectifier Diode Switching 1KV 1A 75ns 2-Pin SMAE T/R |
товар відсутній |
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US1ME-TP | Виробник : Micro Commercial Co |
Description: DIODE GEN PURP 1KV 1A SMAE Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMAE Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 1000 Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товар відсутній |
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US1ME-TP | Виробник : Micro Commercial Co |
Description: DIODE GEN PURP 1KV 1A SMAE Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMAE Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 1000 |
товар відсутній |