Технічний опис US5U29TR
Description: MOSFET P-CH 20V 1A TUMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TUMT5, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V.
Інші пропозиції US5U29TR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
US5U29TR | Виробник : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT5 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V |
товару немає в наявності |
|
![]() |
US5U29TR | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT5 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V |
товару немає в наявності |
|
![]() |
US5U29TR | Виробник : ROHM Semiconductor |
![]() |
товару немає в наявності |