US6J11TR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
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Технічний опис US6J11TR Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6, Power - Max: 320mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Drain to Source Voltage (Vdss): 12V.
Інші пропозиції US6J11TR за ціною від 17.17 грн до 68.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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US6J11TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 1.3A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
на замовлення 4301 шт: термін постачання 21-31 дні (днів) |
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US6J11TR | ROHM Semiconductor |
MOSFETs TRANS MOSFET PCH 12V 1.3A 6PIN |
на замовлення 7008 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
| US6J11TR |
|
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| US6J11TR |
|
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET 2P-CH 12V 1.3A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 6V
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
на замовлення 4301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 40.52 грн |
| 100+ | 26.37 грн |
| 500+ | 19.01 грн |
| 1000+ | 17.17 грн |
| US6J11TR |
|
Виробник: ROHM Semiconductor
MOSFETs TRANS MOSFET PCH 12V 1.3A 6PIN
MOSFETs TRANS MOSFET PCH 12V 1.3A 6PIN
на замовлення 7008 шт:
термін постачання 21-30 дні (днів)