US6J12TCR ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET 1.5V Drive Pch+Pch MOSFET. US6J12 is low on-resistance MOSFET, suitable for switching application.
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 45.67 грн |
| 10+ | 38.42 грн |
| 100+ | 23.13 грн |
| 500+ | 19.33 грн |
| 1000+ | 16.43 грн |
| 3000+ | 14.29 грн |
| 6000+ | 13.46 грн |
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Технічний опис US6J12TCR ROHM Semiconductor
Description: MOSFET 2P-CH 12V 2A TUMT6, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Drain to Source Voltage (Vdss): 12V, Power - Max: 910mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual).
Інші пропозиції US6J12TCR за ціною від 18.58 грн до 73.00 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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US6J12TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 2A TUMT6 Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drain to Source Voltage (Vdss): 12V Power - Max: 910mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2738 шт: термін постачання 21-31 дні (днів) |
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| US6J12TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TUMT6
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 910mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 12V 2A TUMT6
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 12V
Power - Max: 910mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2738 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.00 грн |
| 10+ | 43.60 грн |
| 100+ | 28.45 грн |
| 500+ | 20.56 грн |
| 1000+ | 18.58 грн |