US6M1TR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Drain to Source Voltage (Vdss): 30V, 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Технічний опис US6M1TR Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6, Part Status: Active, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V, Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A, Drain to Source Voltage (Vdss): 30V, 20V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції US6M1TR за ціною від 14.57 грн до 77.66 грн
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US6M1TR | ROHM Semiconductor |
MOSFETs N+P 30 20V 1A |
на замовлення 7293 шт: термін постачання 21-30 дні (днів) |
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US6M1TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
на замовлення 11776 шт: термін постачання 21-31 дні (днів) |
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| US6M1TR |
|
Виробник: ROHM Semiconductor
MOSFETs N+P 30 20V 1A
MOSFETs N+P 30 20V 1A
на замовлення 7293 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.56 грн |
| 10+ | 47.79 грн |
| 100+ | 27.13 грн |
| 500+ | 20.99 грн |
| 1000+ | 18.92 грн |
| 3000+ | 14.57 грн |
| US6M1TR |
|
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 1.4A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
на замовлення 11776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.66 грн |
| 10+ | 46.59 грн |
| 100+ | 30.45 грн |
| 500+ | 22.07 грн |
| 1000+ | 19.97 грн |