UT6J3TCR1 Rohm Semiconductor

Description: MOSFET 2P-CH 20V 3A 8DFN, Supplier Device Package: DFN2020-8D, Vgs(th) (Max) @ Id: 1V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).