UT6JA3TCR ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs UT6JA3 is a power MOSFET with low on-switching, suitable for switching.
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.96 грн |
| 10+ | 35.80 грн |
| 100+ | 21.54 грн |
| 500+ | 18.02 грн |
| 1000+ | 17.53 грн |
Відгуки про товар
Написати відгук
Технічний опис UT6JA3TCR ROHM Semiconductor
Description: MOSFET 2P-CH 20V 5A HUML2020L8, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR).
Інші пропозиції UT6JA3TCR за ціною від 22.55 грн до 85.43 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
UT6JA3TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 20V 5A HUML2020L8 Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 1239 шт: термін постачання 21-31 дні (днів) |
|
| UT6JA3TCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 1239 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.43 грн |
| 10+ | 51.75 грн |
| 100+ | 34.08 грн |
| 500+ | 24.85 грн |
| 1000+ | 22.55 грн |