| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.92 грн |
| 10+ | 70.97 грн |
| 100+ | 44.11 грн |
| 500+ | 34.79 грн |
| 1000+ | 31.82 грн |
| 3000+ | 28.03 грн |
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Технічний опис UT6K30TCR ROHM Semiconductor
Description: MOSFET 2N-CH 60V 3A HUML2020L8, Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.7V @ 50µA, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V, Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V.
Інші пропозиції UT6K30TCR за ціною від 34.22 грн до 123.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UT6K30TCR | Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 3A HUML2020L8Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.7V @ 50µA |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
|
| UT6K30TCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3A HUML2020L8
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Description: MOSFET 2N-CH 60V 3A HUML2020L8
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.7V @ 50µA
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.48 грн |
| 10+ | 75.39 грн |
| 100+ | 50.54 грн |
| 500+ | 37.44 грн |
| 1000+ | 34.22 грн |