| Кількість | Ціна |
|---|---|
| 3+ | 108.72 грн |
| 10+ | 71.49 грн |
| 100+ | 44.44 грн |
| 500+ | 35.05 грн |
| 1000+ | 32.06 грн |
| 3000+ | 28.23 грн |
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Технічний опис UT6K30TCR ROHM Semiconductor
Description: MOSFET 2N-CH 60V 3A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V, Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V, Vgs(th) (Max) @ Id: 2.7V @ 50µA, Supplier Device Package: HUML2020L8, Part Status: Active.
Інші пропозиції UT6K30TCR за ціною від 35.82 грн до 118.13 грн
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UT6K30TCR | Виробник : Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 3A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: HUML2020L8 Part Status: Active |
на замовлення 916 шт: термін постачання 21-31 дні (днів) |
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UT6K30TCR | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 30V Rds On (Max) @ Id, Vgs: 153mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: HUML2020L8 Part Status: Active |
товару немає в наявності |
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| UT6K30TCR | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8 Mounting: SMD Case: DFN2020D-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 2.1nC On-state resistance: 223mΩ Power dissipation: 2W Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: reel; tape |
товару немає в наявності |