UT6ME5TCR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 2W (Ta)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.32 грн |
| 6000+ | 13.41 грн |
| 9000+ | 13.22 грн |
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Технічний опис UT6ME5TCR Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V, Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-PowerUDFN, Packaging: Tape & Reel (TR), Power - Max: 2W (Ta).
Інші пропозиції UT6ME5TCR за ціною від 13.43 грн до 32.55 грн
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UT6ME5TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 2A HUML2020L8 Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V |
на замовлення 9169 шт: термін постачання 21-31 дні (днів) |
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UT6ME5TCR | ROHM Semiconductor |
MOSFETs DFN 100V 2A DUAL CH |
на замовлення 12938 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| UT6ME5TCR |
|
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
на замовлення 9169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 14+ | 22.16 грн |
| 25+ | 19.79 грн |
| 100+ | 16.11 грн |
| 250+ | 14.94 грн |
| 500+ | 14.24 грн |
| 1000+ | 13.43 грн |
| UT6ME5TCR |
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Виробник: ROHM Semiconductor
MOSFETs DFN 100V 2A DUAL CH
MOSFETs DFN 100V 2A DUAL CH
на замовлення 12938 шт:
термін постачання 21-30 дні (днів)