Технічний опис V10KM120DU-M3/I Vishay
Description: DIODE ARR SCHOT 120V 10A FLATPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: FlatPAK 5x6 (Dual), Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A, Current - Reverse Leakage @ Vr: 350 µA @ 120 V.
Інші пропозиції V10KM120DU-M3/I
Фото | Назва | Виробник | Інформація |
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V10KM120DU-M3/I | Виробник : Vishay |
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товару немає в наявності |
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V10KM120DU-M3/I | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V |
товару немає в наявності |
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V10KM120DU-M3/I | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: FlatPAK 5x6 (Dual) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 5 A Current - Reverse Leakage @ Vr: 350 µA @ 120 V |
товару немає в наявності |
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V10KM120DU-M3/I | Виробник : Vishay General Semiconductor |
![]() |
товару немає в наявності |