V10P12HM3_A/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 120V 10A TO277A
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 10A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
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Технічний опис V10P12HM3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 120V 10A TO277A, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 400 µA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 120 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 10A, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN.
Інші пропозиції V10P12HM3_A/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
V10P12HM3_A/I | Виробник : Vishay General Semiconductor |
Schottky Diodes & Rectifiers 10A, 120V, SMPC, TRENCH SKY RECT. |
товару немає в наявності |