V10PM63HM3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
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Технічний опис V10PM63HM3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 2060pF @ 4V, 1MHz, Current - Average Rectified (Io): 4.5A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A, Current - Reverse Leakage @ Vr: 25 µA @ 60 V, Qualification: AEC-Q101.
Інші пропозиції V10PM63HM3/I за ціною від 16.61 грн до 70.70 грн
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V10PM63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.5A TO277A Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 25 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 4.5A Capacitance @ Vr, F: 2060pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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| V10PM63HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 70.70 грн |
| 10+ | 42.51 грн |
| 100+ | 27.80 грн |
| 500+ | 20.14 грн |
| 1000+ | 18.22 грн |
| 2000+ | 16.61 грн |