V15P22HM3/H Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 3+ | 158.35 грн |
| 10+ | 122.93 грн |
| 100+ | 82.98 грн |
| 1500+ | 64.77 грн |
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Технічний опис V15P22HM3/H Vishay General Semiconductor
Description: DIODE SCHOTTKY 200V 3.3A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 835pF @ 4V, 1MHz, Current - Average Rectified (Io): 3.3A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A, Current - Reverse Leakage @ Vr: 350 µA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції V15P22HM3/H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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V15P22HM3/H | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 200V 3.3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 835pF @ 4V, 1MHz Current - Average Rectified (Io): 3.3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A Current - Reverse Leakage @ Vr: 350 µA @ 200 V Qualification: AEC-Q101 |
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| V15P22HM3/H |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 835pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 200V 3.3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 835pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.