V9N3M103HM3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис V9N3M103HM3/I Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 220 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: DFN33A, Current - Average Rectified (Io): 2.8A, Capacitance @ Vr, F: 1100pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції V9N3M103HM3/I за ціною від 15.78 грн до 79.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
V9N3M103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
V9N3M103HM3/I | Vishay |
Schottky Diodes & Rectifiers 9A, 100V DFN33A TMBS RECT |
на замовлення 5980 шт: термін постачання 21-30 дні (днів) |
|
| V9N3M103HM3/I |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.13 грн |
| 10+ | 40.09 грн |
| 25+ | 37.64 грн |
| 100+ | 28.84 грн |
| 250+ | 26.79 грн |
| 500+ | 22.80 грн |
| 1000+ | 17.94 грн |
| 2500+ | 16.26 грн |
| V9N3M103HM3/I |
|
Виробник: Vishay
Schottky Diodes & Rectifiers 9A, 100V DFN33A TMBS RECT
Schottky Diodes & Rectifiers 9A, 100V DFN33A TMBS RECT
на замовлення 5980 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 79.18 грн |
| 10+ | 48.42 грн |
| 100+ | 27.58 грн |
| 500+ | 21.37 грн |
| 1000+ | 19.34 грн |
| 2500+ | 17.67 грн |
| 6000+ | 15.78 грн |