VB20120C-M3/4W Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A TO263AB
Current - Reverse Leakage @ Vr: 700 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис VB20120C-M3/4W Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A TO263AB, Current - Reverse Leakage @ Vr: 700 µA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 120 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції VB20120C-M3/4W
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| VB20120C-M3/4W | Виробник : Vishay Semiconductors |
Schottky Diodes & Rectifiers 20A,120V,TRENCH SKY RECT. |
товару немає в наявності |