VMO550-01F IXYS

Description: MOSFET N-CH 100V 590A Y3-DCB, Packaging: Box, Package / Case: Y3-DCB, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 590A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 500mA, 10V, Power Dissipation (Max): 2200W (Tc), Vgs(th) (Max) @ Id: 6V @ 110mA, Supplier Device Package: Y3-DCB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2000 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 50000 pF @ 25 V.