VMO580-02F
Виробник:
Силові MOSFET-модулі
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Технічний опис VMO580-02F
Description: MOSFET N-CH 200V 580A Y3-LI, Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: Y3-Li, Vgs(th) (Max) @ Id: 4V @ 50mA, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V, Current - Continuous Drain (Id) @ 25°C: 580A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: Y3-Li, Packaging: Bulk.
Інші пропозиції VMO580-02F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
VMO580-02F | IXYS |
Description: MOSFET N-CH 200V 580A Y3-LI Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: Y3-Li Vgs(th) (Max) @ Id: 4V @ 50mA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V Current - Continuous Drain (Id) @ 25°C: 580A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| VMO580-02F |
Виробник: IXYS
Description: MOSFET N-CH 200V 580A Y3-LI
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Y3-Li
Vgs(th) (Max) @ Id: 4V @ 50mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Bulk
Description: MOSFET N-CH 200V 580A Y3-LI
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: Y3-Li
Vgs(th) (Max) @ Id: 4V @ 50mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.