VMO580-02F IXYS
Виробник: IXYSDescription: MOSFET N-CH 200V 580A Y3-LI
Packaging: Bulk
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Vgs(th) (Max) @ Id: 4V @ 50mA
Supplier Device Package: Y3-Li
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
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Технічний опис VMO580-02F IXYS
Category: Transistor modules MOSFET, Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 200V, Drain current: 580A, Case: Y3-Li, Electrical mounting: FASTON connectors; screw, Polarisation: unipolar, On-state resistance: 3.8mΩ, Technology: HiPerFET™, Kind of channel: enhanced, Gate charge: 2.75µC, Reverse recovery time: 300ns, Gate-source voltage: ±20V, Features of semiconductor devices: Kelvin terminal, Mechanical mounting: screw.
Інші пропозиції VMO580-02F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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VMO580-02F | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 580A; Y3-Li; HiPerFET™; 2.75uC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 580A Case: Y3-Li Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 3.8mΩ Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 2.75µC Reverse recovery time: 300ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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