VMO60-05F Ixys Semiconductor GmbH
на замовлення 3 шт:
термін постачання 5 дні (днів)
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Технічний опис VMO60-05F Ixys Semiconductor GmbH
Description: MOSFET N-CH 500V 60A TO240AA, Packaging: Box, Package / Case: TO-240AA, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V, Power Dissipation (Max): 590W (Tc), Vgs(th) (Max) @ Id: 4V @ 24mA, Supplier Device Package: TO-240AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V.
Інші пропозиції VMO60-05F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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VMO60-05F | Виробник : IXYS |
Description: MOSFET N-CH 500V 60A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V Power Dissipation (Max): 590W (Tc) Vgs(th) (Max) @ Id: 4V @ 24mA Supplier Device Package: TO-240AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
товару немає в наявності |
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VMO60-05F | Виробник : IXYS |
 Discrete Semiconductor Modules 60 Amps 500V |
товару немає в наявності |
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| VMO60-05F | Виробник : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 60A Case: TO240AA Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 240A Power dissipation: 590W Technology: HiPerFET™ Kind of channel: enhancement Gate charge: 405nC Reverse recovery time: 250ns Gate-source voltage: ±20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |