VN0550N3-G-P013 Microchip Technology / Atmel
| Кількість | Ціна |
|---|---|
| 4+ | 102.86 грн |
| 25+ | 83.97 грн |
| 100+ | 67.92 грн |
| 4000+ | 67.85 грн |
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Технічний опис VN0550N3-G-P013 Microchip Technology / Atmel
Description: MOSFET N-CH 500V 50MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50mA (Tj), Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V.
Інші пропозиції VN0550N3-G-P013 за ціною від 88.17 грн до 138.71 грн
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VN0550N3-G-P013 | Microchip Technology |
Description: MOSFET N-CH 500V 50MA TO92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Tj) Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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VN0550N3-G-P013 | Microchip Technology |
MOSFETs N-CH Enhancmnt Mode MOSFET |
на замовлення 1952 шт: термін постачання 21-30 дні (днів) |
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VN0550N3-G-P013 | Microchip Technology |
Description: MOSFET N-CH 500V 50MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Tj) Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V |
на замовлення 349 шт: термін постачання 21-31 дні (днів) |
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| VN0550N3-G-P013 |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 50MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
Description: MOSFET N-CH 500V 50MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 106.34 грн |
| VN0550N3-G-P013 |
![]() |
Виробник: Microchip Technology
MOSFETs N-CH Enhancmnt Mode MOSFET
MOSFETs N-CH Enhancmnt Mode MOSFET
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 134.20 грн |
| 25+ | 110.90 грн |
| 100+ | 88.17 грн |
| VN0550N3-G-P013 |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 50MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
Description: MOSFET N-CH 500V 50MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
на замовлення 349 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 138.71 грн |
| 25+ | 112.02 грн |
| 100+ | 102.40 грн |




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