VN2210N2 Microchip Technology

Description: MOSFET N-CH 100V 1.7A TO39, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-39, Vgs(th) (Max) @ Id: 2.4V @ 10mA, Power Dissipation (Max): 360mW (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bag.