VN2222LL-G-P013 Microchip Technology
Виробник: Microchip TechnologyDescription: MOSFET N-CH 60V 230MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta), 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 2164 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 42.29 грн |
| 25+ | 34.43 грн |
| 100+ | 31.23 грн |
Відгуки про товар
Написати відгук
Технічний опис VN2222LL-G-P013 Microchip Technology
Description: MOSFET N-CH 60V 230MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Power Dissipation (Max): 400mW (Ta), 1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Інші пропозиції VN2222LL-G-P013 за ціною від 29.35 грн до 45.99 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
VN2222LL-G-P013 | Виробник : Microchip Technology |
MOSFET N-CH Enhancmnt Mode MOSFET |
на замовлення 3427 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| VN2222LL-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: Ammo Pack Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
|
|
VN2222LL-G-P013 | Виробник : Microchip Technology |
Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
|||||||||||||
| VN2222LL-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: Ammo Pack Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 |
товар відсутній |