VN2410L-G-P014 Microchip Technology
| Кількість | Ціна |
|---|---|
| 4+ | 81.16 грн |
| 100+ | 74.22 грн |
| 250+ | 63.99 грн |
| 500+ | 62.82 грн |
| 1000+ | 51.18 грн |
| 4000+ | 51.11 грн |
Відгуки про товар
Написати відгук
Технічний опис VN2410L-G-P014 Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V, Drain to Source Voltage (Vdss): 240 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 190mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Інші пропозиції VN2410L-G-P014
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
VN2410L-G-P014 | Microchip Technology |
 Description: MOSFET N-CH 240V 190MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| VN2410L-G-P014 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: MOSFET N-CH 240V 190MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.