VN2460N3-G-P003 MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.16A
Pulsed drain current: 0.5A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис VN2460N3-G-P003 MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 600V 160MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160mA (Tj), Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 2mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Інші пропозиції VN2460N3-G-P003
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VN2460N3-G-P003 | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 160MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
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VN2460N3-G-P003 | Виробник : Microchip Technology |
MOSFET N-CH Enhancmnt Mode MOSFET |
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| VN2460N3-G-P003 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced |
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